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 VISHAY
TFBS4711
Vishay Semiconductors
Serial Infrared Transceiver SIR, 115.2 kbit/s, 2.7 V to 5.5 V Operation
Description
The TFBS4711 is a low profile, Infrared Data Transceiver module. It supports IrDA data rates up to 115.2 kbit/s (SIR). The transceiver module consists of a PIN photodiode, an infrared emitter (IRED), and a low-power CMOS control IC to provide a total frontend solution in a single package. The device is designed for the low power IrDA standard with an extended range on-axis up to 1 m. The Rxd pulse width is independent of the duration of Txd pulse and always stays at a fixed width thus making the device optimum for all standard SIR Encoder/ Decoder and interfaces. The Shut Down (SD) feature cuts current consumption to typically 10 nA.
18508
Features
* Compliant with the latest IrDA physical layer low power specification ( 9.6 kbit/s to 115.2 kbit/s) * Small package: H 1.9 mm x D 3.1 mm x L 6.0 mm * Industries smallest footprint - 6.0 mm length - 1.9 mm height * Typical Link distance on-axis up to 1 m * Battery & Power Management Features: > Idle Current - 75 A Typical > Shutdown Current - 10 nA Typical > Operates from 2.4 V - 5.5 V within specification over full temperature range from - 25 C to + 85 C * Remote Control - transmit distance up to 8 meters * Tri-State Receiver Output, floating in shutdown with a weak pull-up * Constant Rxd output pulse width (2 s typical) * Meets IrFM Fast Connection requirements
* Split power supply, an independent, unregulated supply for IRED Anode and a well regulated supply for VCC * Directly Interfaces with Various Super I/O and Controller Devices and Encoder/ Decoder such as TOIM4232.
Applications
* * * * * * * * * * * * * * * Ideal for Battery Operated Devices PDAs Mobile Phones Electronic Wallet (IrFM) Notebook Computers Digital Still and Video Cameras Printers, Fax Machines, Photocopiers, Screen Projectors Data Loggers External Infrared Adapters (Dongles) Diagnostics Systems Medical and Industrial Data Collection Devices Kiosks, POS, Point and Pay Devices GPS Access Control Field Programming Devices
Parts Table
Part TFBS4711-TR1 TFBS4711-TR3 Description Oriented in carrier tape for side view surface mounting Oriented in carrier tape for side view surface mounting 1000 pcs 2500 pcs Qty / Reel
Document Number 82633 Rev. 1.6, 27-Feb-04
www.vishay.com 1
TFBS4711
Vishay Semiconductors Functional Block Diagram
VISHAY
VCC
Amp
Comp
Driver
RxD IRED A
SD TxD
18280
Power Control Driver GND
Pinout
TFBS4711 weight 50 mg
Definitions:
In the Vishay transceiver data sheets the following nomenclature is used for defining the IrDA operating modes: SIR: 2.4 kbit/s to 115.2 kbit/s, equivalent to the basic serial infrared standard with the physical layer version IrPhy 1.0 MIR: 576 kbit/s to 1152 kbit/s FIR: 4 Mbit/s VFIR: 16 Mbit/s MIR and FIR were implemented with IrPhy 1.1, followed by IrPhy 1.2, adding the SIR Low Power Standard. IrPhy 1.3 extended the Low Power Option to MIR and FIR and VFIR was added with IrPhy 1.4.A new version of the standard in any case obsoletes the former
1
18466
2
3
4
5
6
version. With introducing the updated versions the old versions are obsolete. Therefore the only valid IrDA standard is the actual version IrPhy 1.4 (in Oct. 2002).
Pin Description
Pin Number 1 Function IRED Anode Txd Description IRED Anode is directly connected to a power supply. The LED current can be decreased by adding a resistor in series between the power supply and IRED Anode. A separate unregulated power supply can be used at this pin. This Input is used to turn on IRED transmitter when SD is low. An on-chip protection circuit disables the LED driver if the Txd pin is asserted for longer than 80 s Received Data Output, normally stays high but goes low for a fixed duration during received pulses. It is capable of driving a standard CMOS or TTL load. Shutdown. Setting this pin active switches the device into shutdown mode Supply Voltage Ground I HIGH I/O Active
2
3 4 5 6
Rxd SD VCC GND
O I
LOW HIGH
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Document Number 82633 Rev. 1.6, 27-Feb-04
VISHAY
Absolute Maximum Ratings
Reference Point Ground, Pin 6 unless otherwise noted. Parameter Supply voltage range, all states Input current Output sink current, Rxd Average output current, pin 1 IRED anode voltage, pin 1 Voltage at all inputs and outputs Vin > VCC is allowed Ambient temperature range (operating) Storage temperature range Soldering temperature See Recommended Solder Profile 20 % duty cycle IIRED (DC) IIRED (RP) VIREDA VIN Tamb Tstg - 0.5 - 0.5 - 30 - 40 Repetitive pulsed output current < 90 s, ton < 20 % For all Pins except IRED Anode Pin Test Conditions Symbol VCC ICC Min - 0.5 Typ.
TFBS4711
Vishay Semiconductors
Max + 6.0 10.0 25.0 80 400 + 6.0 + 6.0 + 85 + 100 240
Unit V mA mA mA mA V V C C C
Document Number 82633 Rev. 1.6, 27-Feb-04
www.vishay.com 3
TFBS4711
Vishay Semiconductors
VISHAY
Eye safety information
Parameter Virtual source size Maximum intensity for class 1 Test Conditions Method: (1-1/e) encircled energy IEC60825-1 or EN60825-1, edition Jan. 2001, operating below the absolute maximum ratings Symbol d Ie Min 1.3 Typ. 1.5
*)
Max
Unit mm mW/sr
(500)
**)
Electrical Characteristics Transceiver
Tamb = 25 C, VCC = VIREDA = 2.4 V to 5.5 V unless otherwise noted. Parameter Supply voltage range, all states Idle supply current @ VCC1 (receive mode, no signal) SD = Low, Ee = 1 Tamb = - 25 C to + 85 C, VCC = 2.7 V to 5.5 V SD = Low, Ee = 1 klx*), Tamb = 25 C, VCC = 2.7 V to 5.5 V Receive current Shutdown current Operating temperature range Output voltage low, Rxd Output voltage high, Rxd Rxd to VCC impedance Input voltage low: Txd, SD Input voltage high: Txd, SD CMOS level (0.5 x VCC typ, threshold level) IOL = 1 mA IOH = - 500 A IOH = - 250 A VCC = 2.7 V SD = High, T = 25 C, Ee = 0 klx SD = High, T = 85 C klx*), Test Conditions Symbol VCC ICC1 Min 2.4 Typ. Max 5.5 130 Unit V A
ICC1
75
A
ICC ISD ISD TA VOL VOH VOH RRxd VIL VIH IICH IIRTx IIRTx CIN -1 - 25 - 0.5 0.8 x VCC 0.9 x VCC 400 - 0.5 VCC - 0.5 -2
80 < 0.1 2 3 + 85 0.15 x VCC VCC + 0.5 VCC + 0.5 500 600 0.5 6.0 +2 + 150 0 1 5
A A A C V V V k V V A A A pF
Input leakage current (Txd, SD) Vin = 0.9 x VCC Controlled pull down current SD, Txd = "0" or "1", 0 < Vin < 0.15 VCC SD, Txd = "0" or "1" Vin > 0.7 VCC Input capacitance
www.vishay.com 4
Document Number 82633 Rev. 1.6, 27-Feb-04
VISHAY
TFBS4711
Vishay Semiconductors
Optoelectronic Characteristics Receiver
Tamb = 25 C, VCC = 2.4 V to 5.5 V unless otherwise noted Parameter Minimum detection threshold irradiance Maximum detection threshold irradiance Maximum no detection threshold irradiance Rise time of output signal Fall time of output signal Rxd pulse width Leading edge jitter Standby /Shutdown delay, receiver startup time Latency 10 % to 90 %, CL = 15 pF 90 % to 10 %, CL = 15 pF Input pulse width > 1.2 s Input Irradiance = 100 mW/m , 115.2 kbit/s After shutdown active or power-on tL
2
Test Conditions 9.6 kbit/s to 115.2 kbit/s = 850 nm - 900 nm, = 0 , 15 = 850 nm - 900 nm
Symbol Ee
Min
Typ. 35 (3.5) 5 (500)
Max 80 (8)
Unit mW/m2 (W/cm2) kW/m2 (mW/cm2) mW/m2 (W/cm2)
Ee Ee tr(Rxd) tf(Rxd) tPW 4 (0.4) 10 10 1.7
100 100 2.0 3.0 250 150 150
ns ns s ns s s
Transmitter
Tamb = 25 C, VCC = 2.4 V to 5.5 V unless otherwise noted. Parameter IRED operating current Transceiver operating peak supply current IRED leakage current Output radiant intensity Test Conditions Tamb = - 25 C to + 85 C During pulsed IRED operation @ ID = 300 mA Txd = 0 V, 0 < VCC < 5.5 V = 0 , Txd = High, SD = Low, R = 0 , VLED = 2.4 V = 0 , 15 , Txd = High, SD = Low, R = 0 , VLED = 2.4 V VCC = 5.0 V, = 0 , 15 , Txd = High or SD = High (Receiver is inactive as long as SD = High) Output radiant intensity, angle of half intensity Peak-emission wavelength Spectral bandwidth Optical rise time Optical fall time Optical output pulse duration Input pulse width 1.63 s, 115.2 kbit/s Input pulse width tTxd < 20 s Input pulse width tTxd 20 s Optical overshoot Symbol ID ICC IIRED Ie Ie Ie -1 tbd tbd 60 35 0.04 Min 200 Typ. 300 0.57 1 Max 400 Unit mA mA A mW/sr mW/sr mW/sr
p tropt tfopt topt topt topt 10 10 1.41 tTxd 880
22 900 45 100 100 1.63 2.23 tTxd + 0.15 300 25
nm nm ns ns s s s %
Document Number 82633 Rev. 1.6, 27-Feb-04
www.vishay.com 5
TFBS4711
Vishay Semiconductors Recommended Solder Profile
VISHAY
260 240 220 200 180
Temperature /C
240C max.
10 s max. @ 230C
2 - 4 C/s 160C max.
160 140 120 100 80 60 40 20 0 0 50 100 2...4C/s
120 s...180 s
90 s max.
150 Time/s
200
250
300
350
18075
Recommended Circuit Diagram
VCC IR Controller Vdd Rled TFBS4711 IREDA (1) IRTX IRRX IRMODE R1= 47 GND C4 C2 C3 C1 4.7 F 0.1F 4.7 F 0.1 F
18510
TxD RxD SD Vcc GND
(2) (3) (4) (5) (6)
Figure 1. Recommended Application Circuit
The TFBS4711 integrates a sensitive receiver and a built-in power driver. This combination needs a careful circuit layout. The use of thin, long, resistive and inductive wiring should be avoided. The inputs (Txd, SD) and the output (Rxd) should be directly (DC) coupled to the I/O circuit.
The combination of resistor R1 and capacitors C1, C2, C3 and C4 filter out any power supply noise to provide a smooth supply voltage. The placement of these components is critical. It is strongly recommended to position C3 and C4 as close as possible to the transceiver power supply pins. A Tantalum capacitor should be used for C1 and C3 while a ceramic capacitor should be used for C2 and C4. A current limiting resistor is not needed for normal operation. It is strongly recommended to use the Rled values mentioned in Table 1 below for high temperature operation. For Low Power Mode, IRED Anode voltage of less than 5 V is recommended. Under extreme EMI conditions as placing a RF transmitter antenna on top of the transceiver, it is recommended to protect all inputs by a low-pass filter, as a minimum a 12 pF capacitor, especially at the Rxd port. Basic RF design rules for circuit design should be followed. Especially longer signal lines should not be used without proper termination. For reference see "The Art of Electronics" by Paul Horowitz, Winfield Hill, 1989, Cambridge University Press, ISBN: 0521370957.
www.vishay.com 6
Document Number 82633 Rev. 1.6, 27-Feb-04
VISHAY
I/O and Software
In the description, already different I/Os are mentioned. Different combinations are tested and the function verified with the special drivers available
TFBS4711
Vishay Semiconductors
from the I/O suppliers. In special cases refer to the I/ O manual, the Vishay application notes, or contact directly Vishay Sales, Marketing or Application.
Table 1. Recommended Application Circuit Components
Component C1, C3 C2, C4 R1 Rled Recommended Value 4.7 F, 16 V 0.1 F, Ceramic 47 , 0.125 W See Table 1 Vishay Part Number 293D 475X9 016B VJ 1206 Y 104 J XXMT CRCW-1206-47R0-F-RT1
Table 2. Truth table
SD Inputs high low low low Txd Inputs x high high > 300 s low Optical input Irradiance mW/m2 Inputs x x x <4 Outputs weakly pulled (500 ) to VCC1 high inactive high inactive high inactive Outputs 0 Ie 0 0 Remark Shutdown Transmitting Protection is active Ignoring low signals below the IrDA defined threshold for noise immunity Response to an IrDA compliant optical input signal Overload conditions can cause unexpected outputs Rxd Transmitter Operation
low low
low low
> Min. Detection Threshold Irradiance < Max. Detection Threshold Irradiance > Max. Detection Threshold Irradiance
low (active) undefined
0 0
Document Number 82633 Rev. 1.6, 27-Feb-04
www.vishay.com 7
TFBS4711
Vishay Semiconductors Package Dimensions in mm (Inches)
VISHAY
6.00 (0.236)
1.90 (0.075)
EMITTER
DETECTOR
3.81 (0.150)
3.00 (0.118)
0.66 (0.026) 1.65 (0.065)
PIN 1
0.95 (0.037) (5 PLCS) TOL NON CUM 0.62 (0.025) 0.42 (0.017) 0.13 0.05 (0.005 0.002) 0.58 (0.023) (6 PLCS) 0.36 (0.014) (6 PLCS)
ISO Method A
0.95 (0.037) 1 0.81 (0.032)
RECOMMENDED FOOTPRINT TOP VIEW 2 3 4 5 6
0.64 (0.025)
1.74 (0.068)
EMITTER
18815
DETECTOR
www.vishay.com 8
Document Number 82633 Rev. 1.6, 27-Feb-04
VISHAY
Reel Dimensions
TFBS4711
Vishay Semiconductors
W1
Reel Hub
W2
14017
Tape Width mm 16
A max. mm 330
N mm 50
W1 min. mm 16.4
W2 max. mm 22.4
W3 min. mm 15.9
W3 max. mm 19.4
Document Number 82633 Rev. 1.6, 27-Feb-04
www.vishay.com 9
TFBS4711
Vishay Semiconductors Tape Dimensions in mm
VISHAY
18297
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Document Number 82633 Rev. 1.6, 27-Feb-04
VISHAY
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements.
TFBS4711
Vishay Semiconductors
2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 82633 Rev. 1.6, 27-Feb-04
www.vishay.com 11


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